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MUBW 35-12 A7
Output Inverter T1 - T6
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
V CES
V GES
V GEM
T VJ = 25°C to 150°C
Continuous
Transient
1200
± 20
± 30
V
V
V
I C25
I C80
RBSOA
t SC
(SCSOA)
P tot
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 47 ? ; T VJ = 125°C
Clamped inductive load; L = 100 μH
V CE = V CES ; V GE = ± 15 V; R G = 47 ? ; T VJ = 125°C
non-repetitive
T C = 25°C
50
35
I CM = 70
V CEK ≤ V CES
10
225
A
A
A
μs
W
D11 - D16
Rectifier Diode (typ. at T J = 125°C)
V 0 = 0.96 V; R 0 = 13 m ?
T1 - T6 / D1 - D6
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.13 V; R 0 = 50 m ?
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.26V; R 0 = 15 m ?
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
T7 / D7
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.37 V; R 0 = 62 m ?
V CE(sat)
V GE(th)
I CES
I C = 35 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 1 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
4.5
2.6
2.9
3.1
6.5
1.1
V
V
V
mA
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.39 V; R 0 = 56 m ?
Thermal Response
T VJ = 125°C
1
mA
I GES
t d(on)
V CE = 0 V; V GE = ± 20 V
100
200
nA
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
R thJC
Inductive load, T VJ = 125°C
V CE = 600 V; I C = 35 A
V GE = ±15 V; R G = 47 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600V; V GE = 15 V; I C = 35 A
(per IGBT)
70
500
70
5.3
3.9
1650
120
ns
ns
ns
mJ
mJ
pF
nC
0.55 K/W
D11 - D16
Rectifier Diode (typ.)
C th1 = 0.131 J/K; R th1 = 0.851 K/W
C th2 = 0.839 J/K; R th2 = 0.209 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Output Inverter D1 - D6
C th1 = 0.201 J/K; R th1 = 0.419 K/W
C th2 = 1.25 J/K; R th2 = 0.131 K/W
Symbol
Conditions
Maximum Ratings
Free Wheeling Diode (typ.)
I F25
I F80
T C = 25°C
T C = 80°C
50
33
A
A
C th1 = 0.116 J/K; R th1 = 0.973 K/W
C th2 = 0.879 J/K; R th2 = 0.217 K/W
T7 / D7
IGBT (typ.)
Symbol
Conditions
Characteristic Values
min. typ. max.
C th1 = 0.156 J/K; R th1 = 0.545 K/W
C th2 = 1.162 J/K; R th2 = 0.155 K/W
V F
I RM
t rr
I F = 35 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 30 A; di F /dt = -500 A/μs; T VJ = 125°C
V R = 600 V; V GE = 0 V
1.8
27
150
2.8
V
V
A
ns
Free Wheeling Diode (typ.)
C th1 = 0.043 J/K; R th1 = 2.738 K/W
C th2 = 0.54 J/K; R th2 = 0.462 K/W
R thJC
2-8
(per diode)
1.19 K/W
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